TPN2R703NL,L1Q

Single FETs, MOSFETs Overview

The TPN2R703NL,L1Q is a silicon N-channel enhancement mode MOSFET from Toshiba's U-MOSVIII-H series. It features a TSON Advance (8-pin) surface-mount package with dimensions of 3.1mm x 3.1mm x 0.85mm. Key electrical parameters include a drain-source voltage (Vds) of 30 V, a gate-source voltage (Vgs) rating of ±20 V, and a maximum continuous drain current of 90 A at case temperature. The device exhibits a typical on-resistance (Rds(on)) of 4.1 mΩ at Vgs=10 V and a gate charge of 21 nC. It supports a maximum power dissipation of 42 W at case temperature and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes U-MOSVIII-H high-efficiency technology for low conduction losses
• Compact TSON Advance package optimized for high-density PCB layouts
• Enhanced thermal performance suitable for high-current switching applications

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Switching voltage regulators
• Power management circuits in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L1Q against the manufacturer's latest datasheet to confirm packaging details such as reel size or tape-and-reel specifications. Ensure the ordering part number matches the exact pin configuration and marking code required for your assembly process. Cross-reference the component with official distributor catalogs to validate current production status and availability before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance and high current handling in a small footprint. The 30 V rating suits low-voltage power rails. Consider the 4.1 mΩ Rds(on) for efficiency calculations. Verify thermal management requirements given the 42 W dissipation rating at case temperature. Ensure gate drive voltages remain within the ±20 V limit to prevent oxide breakdown.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOSVIII-H family, designed for advanced power switching applications. The TSON Advance package provides superior thermal conductivity compared to standard SOP packages. It is engineered to replace older generation MOSFETs in space-constrained portable devices and industrial power supplies where efficiency and size are critical constraints.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same Toshiba U-MOSVIII-H series with compatible pinouts and electrical ratings. Verify that any alternative component meets the 30 V Vds and 90 A Id requirements while maintaining similar Rds(on) values to ensure circuit performance parity.