TPN7R506NH,L1Q

Single FETs, MOSFETs Overview

The TPN7R506NH,L1Q is a silicon N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It features a U-MOSIX-H technology structure within an 8-TSON surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V, a continuous drain current (Id) of 26 A to 53 A depending on thermal conditions, and a maximum on-resistance (Rds(on)) of 7.5 mΩ at 10 V gate drive. The device supports a junction temperature up to 150°C and offers high power dissipation capabilities.

Single FETs, MOSFETs Feature Summary

• Utilizes Toshiba's U-MOSIX-H technology for low on-resistance and fast switching performance
• Compact 8-terminal TSON surface-mount package designed for small footprint applications
• Enhanced thermal management with high power dissipation ratings under case cooling conditions

Single FETs, MOSFETs Applications

• Switching voltage regulators
• Motor drivers
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L1Q against the manufacturer's latest datasheet to confirm tape-and-reel specifications and marking codes. Ensure the selected component matches the required Rds(on) tolerance and thermal resistance values for your specific PCB layout and ambient temperature constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with low conduction losses is required in a compact SMD form factor. Consider the 7.5 mΩ Rds(on) at 10 V Vgs for efficiency optimization. Evaluate the 42 W power dissipation rating under case cooling versus 700 mW at ambient temperature to determine appropriate heatsinking or copper pour requirements for the target application.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's U-MOSIX-H series of power MOSFETs, which are engineered for high-density power conversion systems. The TPN7R506NH variant specifically targets applications requiring robust switching performance in limited space, leveraging advanced silicon processes to minimize gate charge and switching losses compared to standard planar technologies.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with TPH2R506PL,L1Q for higher current capacity or TPH5R906NH,L1Q for lower current but potentially different thermal profiles. Verify pinout compatibility and ensure the replacement maintains the same 60 V rating and N-channel configuration.