TSM10NC60CF C0G

Single FETs, MOSFETs Overview

The TSM10NC60CF C0G is a single N-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor. It utilizes silicon technology and is housed in an ITO-220S (TO-220AB) through-hole package with three pins. The device features a drain-source breakdown voltage of 600 V and a continuous drain current rating of 10 A at case temperature. Key electrical characteristics include a maximum on-resistance of 670 mOhms, a gate charge of 33 nC at 10 V, and a gate-source threshold voltage of 2.5 V. It supports a maximum gate-source voltage of ±30 V and dissipates up to 45 W of power at case temperature. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode construction for reliable switching performance
• High-voltage capability with 600 V drain-source breakdown rating
• Through-hole mounting design suitable for high-power thermal management

Single FETs, MOSFETs Applications

• General-purpose power switching circuits
• DC-DC converter topologies
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'C0G' against the manufacturer's official datasheet to confirm exact pinout and electrical tolerances. Note that this component is listed as obsolete by major distributors; ensure availability through authorized channels or consider active replacements if long-term supply is required.

Single FETs, MOSFETs Selection Notes

Select this component when a robust through-hole N-channel MOSFET is needed for 600 V applications. Compare the 670 mOhm on-resistance and 10 A current rating against circuit requirements. Ensure the ITO-220S package fits the PCB layout and thermal constraints of the design.

Single FETs, MOSFETs Part Context

This part belongs to the TSM series of power MOSFETs from Taiwan Semiconductor, designed for general-purpose switching. The ITO-220S package provides a balance between current handling and board space. It serves as a discrete solution for medium-power electronics where through-hole reliability is preferred over surface-mount alternatives.

Single FETs, MOSFETs Replacement Considerations

Check for active equivalents with matching 600 V / 10 A ratings and compatible TO-220 packages. Verify pinout compatibility before substitution due to potential variations in internal structure among different manufacturers.