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TSM2302CX RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CHANNEL 20V 3.9A SOT23. Review the specifications below when checking this part for your BOM.
The TSM2302CX RFG is a single N-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It features a maximum drain-source voltage of 20 V and a continuous drain current of 3.9 A at case temperature. The device utilizes a surface-mount SOT-23 package with three pins. Key electrical parameters include a maximum on-resistance of 65 mΩ at 4.5 V gate drive, a typical gate charge of 7.8 nC, and a maximum power dissipation of 1.5 W. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'RFG' against the manufacturer's official datasheet to confirm compliance with RoHS3 and REACH regulations. Confirm moisture sensitivity level classification prior to PCB assembly processing. Ensure the component status is reviewed as it may be marked as not recommended for new designs in some distributor catalogs.
Select this component when a 20 V N-channel MOSFET with moderate current handling is required in a compact SOT-23 footprint. Compare the 65 mΩ on-resistance against system thermal constraints. Verify that the 3.9 A continuous current rating aligns with peak load requirements. Check compatibility with standard logic gate drive voltages given the threshold specifications.
This part belongs to the TSM23yyCX series of small-signal power MOSFETs from Taiwan Semiconductor. The series offers various voltage and current ratings within the same SOT-23 package family. The TSM2302 variant specifically targets low-voltage applications requiring efficient switching performance in space-constrained portable or industrial electronics.
TSM2302CXRFGTR-ND
The maximum gate-source voltage is rated at ±8 V.
Yes, the device supports a maximum junction temperature of +150°C.
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