TSM7ND65CI

Single FETs, MOSFETs Overview

The TSM7ND65CI is an N-Channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a Drain-to-Source Voltage (Vdss) of 650 V and a Continuous Drain Current (Id) of 7 A at case temperature. The device is housed in the ITO-220 through-hole package, suitable for power switching applications requiring high voltage tolerance.

Single FETs, MOSFETs Feature Summary

• N-Channel MOSFET technology
• High voltage rating of 650 V
• Through-hole ITO-220 packaging

Single FETs, MOSFETs Applications

• Power switching circuits
• Industrial motor control
• Inverter designs

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer marking matches Taiwan Semiconductor Corporation. Confirm the part number suffix 'CI' corresponds to the specific tape and reel or tube configuration if applicable. Check for authenticity markers on the ITO-220 package to ensure the component is original and not counterfeit.

Single FETs, MOSFETs Selection Notes

Select this component when a 650 V N-Channel MOSFET with 7 A continuous drain current capability is required. Ensure the thermal management design supports the 50 W power dissipation rating at case temperature. Verify that the ITO-220 package fits the PCB layout constraints.

Single FETs, MOSFETs Part Context

This component belongs to the single FETs category within the Taiwan Semiconductor product line. It is designed for general-purpose power switching applications where high voltage isolation and moderate current handling are necessary. The ITO-220 package provides robust mechanical stability for through-hole mounting.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for equivalent parts offering similar Vdss and Id ratings in ITO-220 packages. Ensure gate charge and threshold voltage specifications match the driving circuit requirements before substitution.