TSSW3U60HRVG

Single Diodes Overview

The TSSW3U60HRVG is a trench Schottky rectifier manufactured by Taiwan Semiconductor Corporation. It features a single diode configuration housed in an SOD-123W surface-mount package. The device supports a maximum repetitive reverse voltage of 60 V and an average forward current of 3 A. Key electrical characteristics include a maximum forward voltage of 580 mV at 3 A, a peak forward surge current rating of 60 A, and a maximum reverse leakage current of 1 mA at 60 V. The component operates within a junction temperature range of -55°C to +150°C.

Single Diodes Feature Summary

• Utilizes trench Schottky technology for low forward voltage drop and high efficiency
• Designed for surface-mount applications with compact SOD-123W packaging
• Capable of handling high thermal stress with extended operating temperature range

Single Diodes Applications

• DC-DC converter circuits
• Power supply freewheeling diodes
• Reverse polarity protection systems

Single Diodes Procurement Notes

Verify the specific suffix HRVG against official datasheets to confirm marking and reel specifications. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Ensure the ordering quantity matches the manufacturer's standard packaging requirements. Cross-reference the part number with authorized distributors to validate authenticity and traceability.

Single Diodes Selection Notes

Select this component for designs requiring a 60 V blocking capability and 3 A continuous current handling in a small footprint. The low forward voltage characteristic makes it suitable for low-voltage, high-efficiency power conversion applications. Consider the thermal management requirements associated with the SOD-123W package when designing the PCB layout.

Single Diodes Part Context

This part belongs to the TSSW3U series of trench Schottky rectifiers from Taiwan Semiconductor. The series offers various voltage ratings including 45 V and 60 V options. These devices are engineered to replace conventional fast recovery diodes in high-frequency switching applications due to their superior switching characteristics and reduced reverse recovery charge.