TT8U2TR

Description：MOSFET P-CH 20V 2.4A 8TSST
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:af821e2a8ed2 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

TT8U2TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET P-CH 20V 2.4A 8TSST. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TT8U2TR

Description：MOSFET P-CH 20V 2.4A 8TSST
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：105mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：850 pF @ 10 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-TSST
Package / Case：8-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for TT8U2TR

TT8U2TR

Single FETs, MOSFETs Overview

The TT8U2TR is a P-channel MOSFET integrated with a Schottky barrier diode, manufactured by ROHM Semiconductor. It operates in the TSST-8 surface-mount package with eight terminals. Key electrical parameters include a drain-source voltage of -20V and a continuous drain current of -2.4A. The on-state resistance (RDS(on)) varies with gate drive voltage: 0.18Ω at VGS = 1.5V, 0.105Ω at VGS = 2.5V, and 0.08Ω at VGS = 4.5V. Total gate charge is 6.7nC, with power dissipation rated at 1W. The integrated Schottky diode supports a reverse voltage of 20V and a forward current of 1A.

Single FETs, MOSFETs Feature Summary

Integrates a P-channel MOSFET with a Schottky barrier diode for combined switching and freewheeling functions.
Optimized for low-voltage drive applications with specific RDS(on) performance at 1.5V gate drive.
Utilizes a compact TSST-8 surface-mount package designed for space-constrained power supply designs.

Single FETs, MOSFETs Applications

Power supply circuits
Low-voltage DC-DC conversion stages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance documentation matches the specific batch. Ensure storage conditions remain within the specified temperature range (-55°C to 150°C) to maintain device integrity prior to assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-channel switch with an integrated body diode alternative. Evaluate thermal management capabilities given the 1W power dissipation limit in the TSST-8 package. Consider the low gate charge for high-frequency switching efficiency in portable or battery-operated systems.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's lineup of low-voltage drive MOSFETs designed for efficient power management. The TSST-8 package offers a small footprint suitable for modern electronic devices. As an obsolete product, it represents previous generation technology optimized for specific low-voltage automotive or industrial applications.