TTA0002(Q)

Single Bipolar Transistors Overview

The TTA0002 is a silicon PNP triple diffused type transistor designed for power amplifier applications. It features a high collector voltage with VCEO rated at -160 V minimum and VCBO at -160 V. The device supports a DC collector current of -18 A and a pulse collector current of -35 A, with a collector power dissipation of 180 W. It exhibits a transition frequency (fT) of 30 MHz typical at IC = -1 A. The component is housed in a TO-220 package (JEDEC 2-21F1A), weighs approximately 9.75 g, and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• High collector-emitter breakdown voltage capability suitable for demanding power stages
• Triple diffused silicon construction optimized for thermal stability and reliability
• Complementary pairing available with the TTC0002 NPN transistor

Single Bipolar Transistors Applications

• High-fidelity audio frequency amplifier output stages
• Power amplifier circuits requiring high voltage handling
• Audio equipment output drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the procurement channel is an authorized distributor to ensure product authenticity. Review the latest datasheet revision date prior to finalizing specifications for design integration.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a PNP power transistor with a minimum -160 V collector-emitter voltage rating. Ensure the application circuit can manage the 180 W power dissipation through appropriate heatsinking. Verify that the load current requirements fall within the -18 A DC limit and consider the complementary TTC0002 if an NPN counterpart is needed for push-pull configurations.

Single Bipolar Transistors Part Context

This device belongs to the category of silicon PNP transistors manufactured by Toshiba Semiconductor and Storage. It utilizes triple diffused technology to achieve high voltage and current capabilities. The part is specifically engineered for robust performance in analog power amplification environments where high voltage margins are critical.

Single Bipolar Transistors Replacement Considerations

The TTA0002 is documented as complementary to the TTC0002. No other direct substitute part numbers are confirmed in the provided public documentation.