UF3C120400B7S

Single FETs, MOSFETs Overview

The onsemi UF3C120400B7S is a Silicon Carbide (SiC) MOSFET from the UF3C series, designed for high-efficiency power conversion. It features a 1200V drain-source breakdown voltage and a continuous drain current of 40A. The device utilizes a TO-247-4 package with screw mounting for robust thermal management. Key electrical characteristics include a maximum gate-source voltage of ±25V and a typical on-resistance optimized for low conduction losses. It operates within a junction temperature range of -55°C to 175°C, supporting high-power applications requiring fast switching and high thermal stability.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide technology for superior thermal performance and high-temperature operation up to 175°C.
• Features a TO-247-4 package with screw terminals for secure mechanical mounting and efficient heat dissipation.
• Designed for high-voltage applications with a 1200V blocking capability and fast switching characteristics.

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Solar inverters and photovoltaic systems
• Uninterruptible power supplies (UPS)
• Electric vehicle (EV) charging stations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'B7S' against the official datasheet to confirm pinout configuration and packaging details. Ensure compatibility with drive circuits operating at ±25V gate voltage. Confirm thermal interface requirements for the TO-247-4 package in your design. Cross-reference the manufacturer's latest documentation for any updates to electrical limits or recommended operating conditions prior to final procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and low switching losses. The 40A current rating suits medium-to-high power applications. Consider the TO-247-4 package for its balance of current handling and mounting simplicity. Evaluate thermal resistance values in the datasheet to determine appropriate heatsinking. Compare on-resistance specifications against alternative SiC devices to optimize system efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the UF3C series of silicon carbide MOSFETs from onsemi. The series is engineered for next-generation power electronics, offering higher efficiency than traditional silicon counterparts. The UF3C120400B7S specifically targets applications demanding high reliability and performance under harsh thermal conditions, leveraging advanced SiC material properties.

Single FETs, MOSFETs Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same voltage and current class. Verify that substitute components match the TO-247-4 package dimensions and thermal characteristics. Ensure gate charge and threshold voltage parameters are compatible with existing driver circuitry before substitution.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the UF3C120400B7S?

The maximum operating junction temperature is 175°C, allowing for robust performance in high-thermal-stress environments.

What package type does this device use?

It uses a TO-247-4 package, which provides four terminals including source, drain, gate, and an additional terminal often used for enhanced thermal coupling or sensing.

What is the rated drain-source voltage?

The device has a rated drain-source breakdown voltage (Vds) of 1200V.