UJ4C075023L8SSB

Single FETs, MOSFETs Overview

The UJ4C075023L8S is a 750 V, 23 mΩ EliteSiC Cascode JFET Power N-Channel device in an H-PDSO-F8 package. It integrates a normally-on SiC JFET with a Si MOSFET to create a normally-off switch. Key electrical parameters include a continuous drain current of 64 A at 25 °C, a gate threshold voltage of 4.8 V typical, and a total gate charge of 37.8 nC. The device supports a maximum junction temperature of 175 °C and features low reverse recovery charge (122 nC) and intrinsic capacitance.

Single FETs, MOSFETs Feature Summary

• Cascode configuration combining a normally-on SiC JFET and a Si MOSFET for enhanced performance
• Standard gate drive compatibility allowing direct replacement of silicon IGBTs and FETs
• Ultra-low gate charge and exceptional reverse recovery characteristics
• ESD protection rated at HBM Class 2 and CDM Class C3

Single FETs, MOSFETs Applications

• EV Charging
• PV Inverters
• Switch Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L8S corresponds to the H-PDSO-F8 tape and reel packaging format. Confirm that the component meets RoHS compliance requirements as stated in the datasheet. Ensure the application design accounts for the recommended external gate resistor values to optimize reverse recovery performance and manage switching energy losses effectively.

Single FETs, MOSFETs Selection Notes

Select this component when standard gate drive voltages are required without complex level shifting. The cascode architecture simplifies driver design compared to discrete SiC MOSFETs. Evaluate thermal management capabilities based on the 0.54 °C/W junction-to-case thermal resistance. Consider the low output capacitance for high-frequency switching applications where efficiency is critical.

Single FETs, MOSFETs Part Context

This part belongs to the EliteSiC series from onsemi, utilizing a unique cascode circuit topology. It is designed to replace traditional silicon power devices while offering superior switching speeds and lower conduction losses. The H-PDSO-F8 package provides a compact form factor suitable for dense PCB layouts in modern power electronics systems.

Single FETs, MOSFETs Replacement Considerations

Officially documented substitutes within the same family include UJ4C075018L8S and UJ4C075011L8S. Verify pinout compatibility and ensure the alternative part's on-resistance and current ratings meet the specific circuit requirements before implementation.

Single FETs, MOSFETs FAQ

How does the cascode configuration affect gate drive requirements?

The integration of a Si MOSFET allows the device to operate with standard gate drive voltages, eliminating the need for negative gate bias typically required by discrete SiC MOSFETs.

What is the purpose of the external gate resistor in this device?

An external gate resistor is recommended to achieve optimum reverse recovery performance when the FET operates in diode mode and to control switching speed and EMI.