UMN11NTN

Diode Arrays Overview

The UMN11NTN is a small signal switching diode from ROHM Semiconductor, designed for high-speed applications. It features an epitaxial planar structure housed in a compact SOT-363-6 surface-mount package. The device supports a peak reverse voltage of 80 V and a forward current of 100 mA, with a maximum surge current rating of 4 A. Key electrical parameters include a reverse recovery time of 4 ns, a forward voltage of 1.2 V, and a reverse current of 100 nA. It operates within a temperature range of -55 C to +150 C and has a power dissipation capacity of 200 mW. The component is qualified under AEC-Q101 standards for automotive reliability.

Diode Arrays Feature Summary

• High-speed switching capability with a 4 ns reverse recovery time
• Automotive-grade reliability qualification under AEC-Q101 standards
• Compact SMD/SMT packaging suitable for space-constrained designs

Diode Arrays Applications

• High-speed switching circuits
• Automotive electronic systems
• General-purpose signal rectification

Diode Arrays Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, as variations may exist between tape-and-reel and cut-tape formats. Confirm that the procurement source provides official documentation to validate the AEC-Q101 qualification status. Check for any recent lifecycle updates, as availability and recommended design status can change. Ensure the supplier is authorized to guarantee component authenticity and traceability.

Diode Arrays Selection Notes

Select this component when a dual common-cathode switching diode is required in a minimal footprint. The 80 V reverse voltage rating suits low-voltage digital logic interfaces. Consider the 4 ns recovery time for high-frequency signal processing tasks. The SOT-363-6 package allows for automated surface-mount assembly. Evaluate thermal constraints based on the 200 mW power dissipation limit in enclosed environments.

Diode Arrays Part Context

This part belongs to ROHM's small signal switching diode family, characterized by epitaxial planar structures. It is distinct from the UMG11NTR digital transistor and UMH11N complex transistor due to its pure diode function. The UMN11NFHTN variant shares similar electrical characteristics but differs in packaging or suffix designation. This series targets applications requiring fast switching speeds in compact form factors.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternative components.