V10K100DUHM3/I

Diode Arrays Overview

The V10K100DUHM3/I is a high current density surface-mount Trench MOS barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a dual anode common cathode configuration in a FlatPAK 5 x 6 package. The device supports a maximum repetitive peak reverse voltage of 100 V and provides a total average forward current of 10 A (5 A per diode). Key electrical characteristics include a typical instantaneous forward voltage of 0.48 V at 2.5 A and 125 °C, with a peak forward surge current rating of 100 A per diode. It operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses
• AEC-Q101 qualified for automotive reliability standards
• Halogen-free and RoHS compliant construction
• Meets MSL level 1 requirements with a maximum peak reflow temperature of 260 °C

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm delivery mode and base quantity. The /I suffix indicates a 13-inch diameter plastic tape and reel with a base quantity of 6000 units. Confirm that the HM3 designation aligns with required automotive qualification and halogen-free compliance specifications before finalizing procurement.

Diode Arrays Selection Notes

Select this component for designs requiring low forward voltage drops to maximize efficiency in high-frequency switching environments. Ensure the thermal management strategy accounts for the specified junction-to-ambient thermal resistance when operating near the maximum rated ambient temperatures. Validate that the 100 V reverse voltage rating exceeds the circuit's peak transient voltages.

Diode Arrays Part Context

This part belongs to the V10K series of high current density surface-mount Schottky rectifiers from Vishay. The series utilizes advanced Trench MOS barrier technology to achieve superior performance compared to standard Schottky devices. The FlatPAK 5 x 6 package offers a compact footprint suitable for space-constrained printed circuit board layouts.

Diode Arrays Replacement Considerations

V10K100DU-M3/I

Diode Arrays FAQ

What is the maximum operating junction temperature for the V10K100DUHM3/I?

The maximum operating junction temperature range extends up to +150 °C.

How is the internal circuit configured in this dual diode package?

The device features a separated cathode configuration, functioning as two independent diodes sharing a common ground reference point.

Does this component meet automotive industry standards?

Yes, the HM3 variant is AEC-Q101 qualified, making it suitable for automotive applications.