V10P22CHM3/H

Diode Arrays Overview

The V10P22CHM3/H is a high current density surface-mount TMBS (Trench MOS Barrier Schottky) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode circuit configuration within an SMPC (TO-277A) package. The device supports a maximum repetitive peak reverse voltage of 200 V and a total maximum average forward rectified current of 10 A (5 A per diode). It achieves ultra-low forward voltage characteristics, with a typical VF of 0.61 V at IF = 2.5 A and 0.69 V at IF = 5 A. The component operates within a junction temperature range of -40 °C to +175 °C and is qualified under the AEC-Q101 standard.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Features a very low profile design with a typical height of 1.1 mm suitable for automated placement
• Halogen-free and RoHS-compliant construction
• Meets MSL level 1 requirements per J-STD-020

Diode Arrays Applications

• Low voltage high frequency inverters
• Freewheeling applications
• DC/DC converters
• Polarity protection circuits

Diode Arrays Procurement Notes

Verify that the specific ordering code includes the HM3 suffix to confirm AEC-Q101 automotive qualification status. Ensure the base part number matches the required electrical ratings before procurement. Confirm compliance with halogen-free and RoHS directives as specified in the mechanical data section of the official documentation.

Diode Arrays Selection Notes

Select this component for designs requiring high efficiency and low thermal dissipation in compact form factors. The SMPC package provides robust mounting capabilities while maintaining a minimal vertical footprint. Consider the 175 °C maximum junction temperature rating for high-temperature operational environments.

Diode Arrays Part Context

This device belongs to the eSMP® series of high current density surface-mount rectifiers. It represents an evolution in Trench MOS Barrier Schottky technology designed to deliver superior performance compared to traditional planar Schottky devices. The product line targets demanding power-conversion applications where space constraints and thermal management are critical design parameters.

Diode Arrays Replacement Considerations

V10P22C-M3/H

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 2.5 A?

The typical instantaneous forward voltage is 0.61 V when tested at an forward current of 2.5 A and a junction temperature of 125 °C.

Is this component suitable for automated assembly?

Yes, the datasheet explicitly states it is ideal for automated placement due to its very low profile and standardized SMPC packaging.

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is rated at 200 V.