V10PW12C-M3/I

Diode Arrays Overview

The V10PW12C-M3/I is a dual common cathode Trench MOS Barrier Schottky (TMBS) rectifier in the SlimDPAK (TO-252AE) package. It provides a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 10 A per device, with 5 A per diode. The component features a low forward voltage drop of 0.62 V at 5 A and 125 °C, alongside a peak forward surge current rating of 80 A. Operating junction temperature ranges from -40 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for high efficiency operation and reduced power losses.
• Features a very low profile typical height of 1.3 mm, suitable for automated placement.
• Includes a heatsink pin designed to improve thermal conductivity from junction to mount.

Diode Arrays Applications

• Low voltage high frequency DC/DC converters
• Freewheeling diodes
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the complete part number including suffixes such as /I or HM3 against official Vishay documentation before procurement. Confirm that the specific ordering code matches the required automotive qualification status if applicable. Ensure the requested delivery mode aligns with the standard reel packaging specifications provided in the datasheet.

Diode Arrays Selection Notes

Select this component for designs requiring a compact surface-mount solution with high current density capabilities. The SlimDPAK package offers a balance between thermal performance and board space efficiency. Consider the 120 V blocking capability and 10 A continuous current rating when sizing the thermal management system for the target application environment.

Diode Arrays Part Context

This device belongs to the eSMP series of high current density surface-mount rectifiers manufactured by Vishay General Semiconductor. It represents an evolution in TMBS technology aimed at replacing traditional planar diodes in applications demanding lower forward voltage drops and improved switching characteristics within a standardized TO-252AE footprint.

Diode Arrays Replacement Considerations

V10PW12CHM3/I

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +150 °C.

How is the device configured internally?

The V10PW12C-M3/I utilizes a dual common cathode circuit configuration.

Does the component meet specific automotive standards?

An AEC-Q101 qualified version is available under the base part number with the HM3 suffix.