V10PWL63HM3/I

$0.86

Description：DIODE SCHOTTKY 60V 10A SLIMDPAK
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f782842d22d0 Category: Single Diodes Brand: Vishay General Semiconductor - Diodes Division

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

V10PWL63HM3/I is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 60V 10A SLIMDPAK. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for V10PWL63HM3/I

Description：DIODE SCHOTTKY 60V 10A SLIMDPAK
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：60 V
Current - Average Rectified (Io)：10A
Voltage - Forward (Vf) (Max) @ If：580 mV @ 10 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：250 µA @ 60 V
Capacitance @ Vr, F：2100pF @ 4V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：SlimDPAK
Operating Temperature - Junction：-40°C ~ 150°C
Grade：Automotive
Qualification：AEC-Q101

Single Diodes datasheet and documents for V10PWL63HM3/I

V10PWL63HM3/I

Single Diodes Overview

The V10PWL63HM3/I is a Vishay General Semiconductor SlimDPAK (TO-252AE) surface-mount TMBS rectifier. It features a maximum repetitive peak reverse voltage of 60 V and an average forward rectified current of 10 A. The device achieves ultra-low forward voltage drops, specifically 0.34 V at 5 A and 0.45 V at 10 A when the junction temperature is 125 °C. It operates within a junction temperature range of -40 to +150 °C and supports a peak forward surge current of 180 A.

Single Diodes Feature Summary

Utilizes Trench MOS Barrier Schottky technology for high efficiency operation and low power losses
Features a very low profile typical height of 1.3 mm suitable for automated placement
AEC-Q101 qualified for automotive applications with halogen-free and RoHS-compliant construction

Single Diodes Applications

Low voltage high frequency DC/DC converters
Freewheeling diodes
Polarity protection applications

Single Diodes Procurement Notes

Verify that the ordering code includes the HM3 suffix to confirm AEC-Q101 qualification. Ensure the /I suffix matches the required tape and reel packaging format. Cross-reference the base part number against official Vishay documentation to validate compliance with JESD 201 class 2 whisker test requirements.

Single Diodes Selection Notes

Select this component for designs requiring high current density in a slim surface-mount package. The TMBS technology provides superior performance compared to standard Schottky diodes. Verify thermal management capabilities as the operating junction temperature limit is 150 °C. Confirm suitability for automated assembly processes due to the optimized physical dimensions.

Single Diodes Part Context

This device belongs to the eSMP® series from Vishay General Semiconductor. It is manufactured using advanced trench MOS barrier schottky technology. The SlimDPAK case utilizes molding compound meeting UL 94 V-0 flammability ratings. Matte tin plated leads ensure solderability per J-STD-002 standards.