Single Diodes VB30120SG-E3/4W product image

VB30120SG-E3/4W

$0.46
  • Description:DIODE SCHOTTKY 120V 30A TO263AB
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube

SKU:f19ff0dcade2 Category: Brand:

  
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VB30120SG-E3/4W is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 120V 30A TO263AB. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for VB30120SG-E3/4W

  • Description:DIODE SCHOTTKY 120V 30A TO263AB
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):120 V
  • Current - Average Rectified (Io):30A
  • Voltage - Forward (Vf) (Max) @ If:1.28 V @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:500 µA @ 120 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for VB30120SG-E3/4W

VB30120SG-E3/4W

Single Diodes Overview

VB30120SG-E3/4W is a high voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a single diode configuration in a TO-263AB (D2PAK) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 30 A. Key electrical parameters include a peak forward surge current of 220 A, a maximum instantaneous forward voltage of 1.28 V at 30 A, and a peak repetitive reverse current of 500 μA at 120 V. Thermal resistance from junction to case is typically 1.6 °C/W.

Single Diodes Feature Summary

  • Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
  • Designed for high efficiency operation in switching applications
  • Compliant with RoHS directives and JESD 201 class 1A whisker test requirements

Single Diodes Applications

  • High frequency converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Single Diodes Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the package type and delivery mode. The standard tube packaging contains fifty units per tube. Confirm that the component meets the required material categorization standards and soldering temperature limits before integration into the manufacturing process.

Single Diodes Selection Notes

Select this component when a surface-mount Schottky rectifier with a 120 V rating and 30 A continuous current capability is required. The TO-263AB package provides efficient thermal dissipation suitable for heatsink mounting. Ensure the application operates within the specified -40 to +150 °C junction temperature range and respects the maximum surge current limits during transient events.

Single Diodes Part Context

This part belongs to the V30120SG series of high voltage Trench MOS Barrier Schottky rectifiers. The SG suffix indicates ultra-low forward voltage characteristics compared to standard variants. The product line includes multiple package options such as TO-220AB, ITO-220AB, and TO-262AA, allowing flexibility in board layout and thermal management strategies for various power supply designs.

Single Diodes Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Verify compatibility based on matching voltage ratings, current capabilities, and package dimensions when considering alternative manufacturers.

VB30120SG-E3/4WVB30120SG-E3/4W
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