VB40100C-M3/8W

Diode Arrays Overview

The VB40100C-M3/8W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a D2PAK (TO-263AB) surface-mount package with a common cathode configuration. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 40 A per device (20 A per diode). Key electrical characteristics include a peak forward surge current of 250 A, a typical thermal resistance of 2.0 °C/W per diode, and a maximum operating junction temperature of 150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Designed for high efficiency operation with low thermal resistance in the D2PAK case.
• Compliant with RoHS directives and halogen-free, meeting JESD 201 class 2 whisker test requirements.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify that the ordering suffix /8W corresponds to the tape and reel delivery mode with a base quantity of 800 units. Confirm the M3 suffix indicates compliance with RoHS standards and halogen-free material definitions as specified in the manufacturer's documentation. Ensure the component meets the required moisture sensitivity level 1 classification for your assembly process.

Diode Arrays Selection Notes

Select this component when a dual Schottky rectifier with a 100 V rating and 40 A total current capacity is required in a TO-263AB package. Consider the 2.0 °C/W thermal resistance for heat dissipation calculations. Validate the forward voltage drop specifications against your specific load current requirements to ensure optimal efficiency in the target circuit design.

Diode Arrays Part Context

This part belongs to the VB40100C series of dual high-voltage TMBS rectifiers from Vishay. The M3 suffix denotes lead finish and environmental compliance, while the /8W suffix specifies the tape and reel packaging format. It is designed to replace standard silicon rectifiers in applications requiring lower forward voltage and faster switching characteristics.

Diode Arrays Replacement Considerations

Direct substitutes within the same family include VB40100C-E3/8W, which shares identical electrical ratings and pinout but may differ in specific material compliance details. Verify package dimensions and thermal characteristics before substitution.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 100 V.

What is the typical thermal resistance per diode?

The typical thermal resistance from junction to case (RθJC) is 2.0 °C/W per diode.

Does the device meet moisture sensitivity level 1?

Yes, the device meets MSL level 1 per J-STD-020 with a LF maximum peak of 245 °C.