VF20120C-M3/4W

Diode Arrays Overview

The VF20120C-M3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration within an ITO-220AB package, providing two independent diodes per device. The component supports a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 20 A, distributed as 10 A per diode. Key electrical parameters include a peak forward surge current rating of 120 A and a maximum junction temperature of 150 °C. Forward voltage characteristics are specified at 0.64 V typical at 10 A and 0.90 V maximum at 10 A.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses for high efficiency operation.
• Features a common cathode circuit configuration with isolated terminals suitable for heatsink mounting.
• Includes matte tin plated leads that are solderable per J-STD-002 standards.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W to confirm tube packaging containing 50 units per tube. Ensure the M3 suffix is present to guarantee compliance with RoHS directives, halogen-free material requirements, and JESD 201 class 1A lead whisker testing standards before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required in a through-hole ITO-220AB package. It is appropriate for designs needing 120 V blocking capability with 10 A continuous current per channel. Consider the thermal resistance of 5.0 °C/W per diode for heatsinking calculations and ensure the application operates within the -40 to +150 °C junction temperature range.

Diode Arrays Part Context

This part belongs to the VF series of dual high-voltage TMBS rectifiers from Vishay. It shares the same core die and electrical architecture as the base model VF20120C but includes specific manufacturing and packaging identifiers. The M3 designation indicates environmental compliance, while the /4W code specifies the bulk tube delivery format.

Diode Arrays Replacement Considerations

Direct substitutes include the VF20120C-E3/4W, which offers identical electrical performance and pinout compatibility. Verify that any replacement maintains the ITO-220AB package dimensions and meets the same 120 V and 10 A per diode ratings.

Diode Arrays FAQ

What is the isolation voltage between the terminal and the heatsink?

The device provides an isolation voltage of 1500 V AC for one minute between the terminal and the heatsink.

Does the M3 suffix affect the electrical performance compared to the standard version?

No, the M3 suffix indicates compliance with RoHS, halogen-free status, and whisker testing; it does not alter the electrical characteristics or pinout.

What is the maximum allowable solder bath temperature?

The maximum solder bath temperature is 275 °C for a duration of 10 seconds, tested per JESD 22-B106.