VFT2045CBP-M3/4W

Diode Arrays Overview

The VFT2045CBP-M3/4W is a dual common cathode Trench MOS Barrier Schottky rectifier in an ITO-220AB package. It features a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 20 A (10 A per diode). The device supports a peak forward surge current of 160 A and operates within a junction temperature range up to 200 °C in DC bypass mode. Electrical characteristics include a typical forward voltage of 0.33 V at 5 A and 125 °C, with a maximum reverse current of 2000 μA at 25 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and high efficiency operation.
• Rated for a maximum junction temperature of 200 °C specifically for solar cell bypass protection applications.
• Compliant with RoHS directives and halogen-free, meeting commercial grade material categorization standards.

Diode Arrays Applications

• Solar cell junction box bypass diode protection
• DC forward current applications without reverse bias
• High frequency switching power supplies

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube packaging configuration containing 50 units per tube as documented in the Vishay datasheet. Confirm that the M3 suffix indicates compliance with JESD 201 class 1A whisker testing requirements. Ensure the component meets the required thermal equilibrium conditions for the intended application environment.

Diode Arrays Selection Notes

Select this component for photovoltaic systems requiring robust bypass protection with high thermal tolerance. The dual common cathode configuration allows for efficient handling of parallel strings. Consider the 1500 V isolation voltage from terminal to heatsink when designing enclosure layouts. Validate thermal resistance parameters against the specific heatsinking strategy employed in the final assembly.

Diode Arrays Part Context

This part belongs to the VFT series of Trench MOS Barrier Schottky Rectifiers manufactured by Vishay General Semiconductor. It is designed specifically for photovoltaic applications, offering superior performance compared to standard silicon rectifiers due to its ultra-low forward voltage characteristics. The ITO-220AB package provides mechanical stability and effective heat dissipation for high-current operations.

Diode Arrays Replacement Considerations

Direct replacements must match the 45 V rating, 20 A total current capacity, and ITO-220AB footprint. Verify that alternative components support the 200 °C junction temperature requirement for solar bypass modes. Check for equivalent TMBS technology to ensure comparable forward voltage drops and switching speeds.

Diode Arrays FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is 200 °C when used in DC forward current applications without reverse bias, such as solar bypass protection.

How is the forward current distributed in this dual diode configuration?

The device has a total maximum average forward rectified current of 20 A, which is distributed as 10 A per diode.

Does this component meet lead whisker testing standards?

Yes, the M3 suffix indicates that the component meets the JESD 201 class 1A whisker test requirements.