VFT30L60C-M3/4W

Diode Arrays Overview

The VFT30L60C-M3/4W is a dual Trench MOS Barrier Schottky (TMBS) rectifier in an ITO-220AB package. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 60 V and a total average forward rectified current of 30 A (15 A per diode). The device exhibits an ultra-low forward voltage drop of 0.32 V at 5.0 A and 125 °C, or 0.45 V at 15 A and 125 °C. Peak forward surge current is rated at 200 A, and the maximum operating junction temperature is 150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses.
• Provides high efficiency operation suitable for demanding power conversion applications.
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the M3 suffix confirms halogen-free composition, RoHS compliance, and adherence to JESD 201 class 1A whisker testing requirements. Confirm the 4W package code corresponds to the specified tube delivery mode containing 50 units per tube. Ensure the ITO-220AB case dimensions match the design constraints.

Diode Arrays Selection Notes

Select this component when low forward voltage drop is critical for minimizing conduction losses in high-frequency switching environments. The TMBS architecture offers superior performance compared to standard Schottky barriers. Verify thermal management capabilities align with the 5.0 °C/W junction-to-case thermal resistance rating for the intended application load.

Diode Arrays Part Context

This part belongs to Vishay's Dual Trench MOS Barrier Schottky Rectifier series. It is designed for robust performance in power conversion systems requiring high efficiency and low heat generation. The ITO-220AB package provides effective thermal dissipation and mechanical stability for through-hole mounting.

Diode Arrays Replacement Considerations

Direct substitutes must maintain the 60 V reverse voltage rating, 15 A per diode current capacity, and ITO-220AB package form factor. Verify that alternative devices support similar thermal characteristics and meet the same RoHS and halogen-free material specifications.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction and storage temperature range is -40 °C to +150 °C.

How is the forward voltage drop defined?

The ultra-low forward voltage is specified as 0.32 V at IF = 5.0 A and TA = 125 °C, or 0.45 V at IF = 15 A and TA = 125 °C.

What is the isolation voltage specification?

The isolation voltage from terminal to heatsink is 1500 V AC for 1 minute.