VIT3060C-M3/4W

Diode Arrays Overview

The VIT3060C-M3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a common cathode configuration with two diodes per device, housed in a TO-262AA through-hole package. The component supports a maximum repetitive peak reverse voltage of 60 V and provides a total maximum average forward rectified current of 30 A, or 15 A per diode. Key electrical characteristics include an instantaneous forward voltage of 0.57 V at 15 A and a peak forward surge current rating of 170 A. The device operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses for high efficiency operation.
• Features a common cathode dual-diode configuration designed for applications requiring freewheeling, OR-ing, and reverse battery protection.
• Compliant with RoHS directives and halogen-free, meeting commercial grade material categorization standards.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific suffix M3/4W to confirm the TO-262AA package and tube delivery mode. Ensure the application environment remains within the specified thermal limits, as the maximum junction temperature is rated at 150 °C. Confirm that the 60 V reverse voltage rating aligns with the circuit's peak reverse voltage requirements. Validate compliance with RoHS and halogen-free specifications if required by the manufacturing process.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is needed for low-loss power conversion. The TMBS technology offers superior performance compared to standard Schottky diodes. Consider the TO-262AA package for through-hole mounting requirements. Ensure the 15 A per diode current rating meets the load demands, accounting for derating curves at elevated case temperatures.

Diode Arrays Part Context

This part belongs to the VT3060C/VIT3060C series of dual high voltage Trench MOS Barrier Schottky Rectifiers from Vishay. The 'VIT' prefix specifically denotes the TO-262AA package variant, while 'VT' indicates the TO-220AB package. Both variants share identical electrical characteristics but differ in physical dimensions and weight.

Diode Arrays Replacement Considerations

The VT3060C-M3/4W serves as the pin-compatible alternative for the VIT3060C-M3/4W, differing only in the TO-220AB package instead of TO-262AA. Verify mechanical fit before substitution.

Diode Arrays FAQ

What is the maximum junction temperature for the VIT3060C-M3/4W?

The maximum operating junction temperature is 150 °C.

Does the M3 suffix indicate a change in electrical function?

No, the M3 suffix indicates that the component is halogen-free, RoHS-compliant, and meets the JESD 201 class 1A whisker test, without altering its electrical parameters.

What is the typical thermal resistance per diode?

The typical thermal resistance from junction to case is 2.5 °C/W per diode.