VN2210N2

Single FETs, MOSFETs Overview

The VN2210N2 is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage (BVDSS) of 100V and a maximum static on-state resistance (RDS(ON)) of 0.35Ω at VGS=10V. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage (VGS(th)) max of 2.4V, forward transconductance (GFS) of 1200 mmho, and input capacitance (CISS) typ. 300pF. It is housed in a 3-lead TO-39 package.

Single FETs, MOSFETs Feature Summary

• Vertical DMOS structure providing high input impedance and positive temperature coefficient
• Free from thermal runaway and thermally induced secondary breakdown
• Integral source-drain diode for commutation applications
• Low power drive requirement with fast switching speeds

Single FETs, MOSFETs Applications

• Motor Controls
• Switches
• Power Supply Circuits
• Drivers (Relays, Solenoids, Lamps)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'N2' corresponds to the 3-lead TO-39 package configuration. Confirm RoHS compliance status as the datasheet notes this package is RoHS-compliant despite lacking the '-G' designator. Ensure the application environment stays within the specified operating temperature range of -55°C to +150°C to maintain reliability.

Single FETs, MOSFETs Selection Notes

Select the VN2210N2 when high breakdown voltage and low input capacitance are required for switching applications. Consider the TO-39 package for through-hole mounting requirements. Evaluate the thermal resistance characteristics against the expected power dissipation levels. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance.

Single FETs, MOSFETs Part Context

The VN2210 series consists of N-Channel Enhancement-Mode Vertical DMOS FETs designed for general-purpose switching and amplifying applications. The product line includes variants such as the VN2210N3-G in a TO-92 package. These devices combine the power handling capabilities of bipolar transistors with the high input impedance inherent in MOS structures.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-reference pinouts and electrical specifications carefully when considering alternatives.