VS-12CTQ045-N3

Diode Arrays Overview

The VS-12CTQ045-N3 is a high-performance Schottky rectifier from Vishay Semiconductors, featuring a dual anode common cathode configuration in a TO-220AB package. It supports a maximum average forward current of 12 A per device and offers a repetitive peak reverse voltage rating of 45 V. The component operates reliably up to a junction temperature of 175 °C with a typical forward voltage drop of 0.53 V at 6 Apk. Key electrical characteristics include a maximum non-repetitive surge current of 690 A and a maximum reverse leakage current of 7 mA at 125 °C.

Diode Arrays Feature Summary

• Optimized for low reverse leakage current at elevated temperatures using proprietary barrier technology
• Designed for high-frequency operation with very low forward voltage drop
• Features guard ring construction for enhanced ruggedness and long-term reliability
• Encapsulated in high-purity, high-temperature epoxy for mechanical strength and moisture resistance

Diode Arrays Applications

• Switching power supplies
• DC-DC converters
• Freewheeling diodes
• Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The -N3 designation indicates the component is halogen-free, RoHS compliant, and totally lead-free. Confirm that the TO-220AB package dimensions match the target PCB layout before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when applications require reliable operation at junction temperatures up to 175 °C. The dual anode common cathode topology is suitable for center-tapped configurations. Ensure thermal management strategies account for the specified thermal resistance values to maintain safe operating limits under continuous load conditions.

Diode Arrays Part Context

This part belongs to the VS-12CTQ...PbF and VS-12CTQ...-N3 series of high-performance Schottky rectifiers. The series includes variants with different voltage ratings, specifically 35 V, 40 V, and 45 V. All variants share the same physical package and general electrical characteristics, differing primarily in their maximum DC reverse voltage specifications.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include VS-12CTQ035-N3 and VS-12CTQ040-N3. These alternatives offer identical packaging and current ratings but provide lower voltage blocking capabilities of 35 V and 40 V respectively.

Diode Arrays FAQ

What is the maximum junction temperature for the VS-12CTQ045-N3?

The maximum junction temperature (TJ) for this component is 175 °C.

How is the internal circuit configured?

The device utilizes a dual anode common cathode configuration housed in a single TO-220AB package.

What is the maximum non-repetitive surge current rating?

The maximum peak one-cycle non-repetitive surge current (IFSM) is 690 A for a 5 μs sine pulse or 3 μs rectangular pulse.