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VS-16TTS12PBF is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 1.2KV 16A TO220AB. Review the specifications below when checking this part for your BOM.
The VS-16TTS12PBF is a high voltage phase control silicon controlled rectifier from Vishay Semiconductors. It features an average on-state current of 10 A and maximum repetitive peak reverse/direct voltages of 800 V or 1200 V. The device has a maximum on-state voltage drop of 1.4 V at 10 A and 25 °C junction temperature. It operates within a junction temperature range of -40 °C to 125 °C and utilizes glass passivation technology for reliability.
Verify the specific voltage code suffix, as '12' indicates a 1200 V rating while '08' denotes 800 V. Confirm compliance requirements by checking for the '-M3' suffix, which signifies halogen-free and lead-free terminations compared to the standard PbF version. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity.
Select this component based on the required blocking voltage level, choosing between 800 V or 1200 V ratings. Evaluate thermal management needs against the specified junction-to-case thermal resistance of 1.3 °C/W. Consider the gate triggering characteristics, specifically the DC gate current requirements which vary with junction temperature, to ensure compatibility with the drive circuitry.
This part belongs to the VS-16TTS series of single SCR thyristors manufactured by Vishay Semiconductors. The series is designed for high voltage phase control applications using silicon technology. The TO-220AB package provides a standardized form factor suitable for through-hole mounting on heatsinks, facilitating efficient heat dissipation in medium power electronic designs.
The VS-16TTS12-M3 serves as a direct replacement variant offering halogen-free compliance alongside lead-free terminations. Both versions share identical electrical ratings and physical dimensions, allowing for interchangeability without modifying the circuit layout or thermal interface design.
The maximum non-repetitive surge current is 200 A for a 10 ms sine pulse with no voltage reapplied, and 170 A when rated VRRM is applied.
The maximum required DC gate current to trigger decreases as temperature increases: it is 90 mA at -65 °C, 60 mA at 25 °C, and 35 mA at 125 °C.
The typical turn-off time (tq) is 110 µs at a junction temperature of 25 °C.
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