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VS-25TTS12STRL-M3 is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 1.2KV 25A TO263AB. Review the specifications below when checking this part for your BOM.
The VS-25TTS12STRL-M3 is a surface mount phase control silicon controlled rectifier (SCR) from Vishay Semiconductors. It features a D2PAK (TO-263AB) package and offers a maximum repetitive peak reverse voltage of 1200 V with an average on-state current rating of 16 A. The device utilizes glass passivation technology for reliable operation up to a junction temperature of 125 °C. Key electrical characteristics include a maximum on-state voltage drop of 1.25 V at 16 A, a gate trigger current of 45 mA, and a non-repetitive surge current capability of 350 A.
Verify the specific ordering suffix 'TRL' corresponds to the left-oriented tape and reel packaging configuration required for automated assembly processes. Confirm that the component meets the halogen-free and lead-free material categorization requirements specified in the datasheet documentation before finalizing procurement specifications.
Select this component when a surface mount SCR with a 1200 V blocking capability is required. Ensure the application design accommodates the thermal resistance characteristics of the D2PAK package. Verify that the gate drive circuitry can supply the necessary trigger current and voltage levels across the specified operating temperature range.
This part belongs to the VS-25TTS...S-M3 series of high-voltage silicon controlled rectifiers manufactured by Vishay Semiconductors. The series includes variants with different voltage ratings, such as the 800 V and 1200 V models. These devices are designed to share identical package outlines, facilitating design flexibility within power electronics architectures.
VS-25TTS12S-M3
The maximum non-repetitive surge current is 350 A for a 10 ms sine pulse with no voltage reapplied.
The D2PAK (TO-263AB) package provides a maximum thermal resistance from junction to case of 1.1 °C/W, requiring appropriate heatsinking or PCB copper area for effective heat dissipation.
The typical turn-off time is 110 µs under standard test conditions.
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