VS-3C05ET12S2L-M3

Single Diodes Overview

The VS-3C05ET12S2L-M3 is a Gen 3 Power SiC Merged PIN Schottky Diode rated for 1200 V and 5 A. It utilizes thin wafer technology to improve forward voltage (VF) and efficiency, featuring a positive VF temperature coefficient that facilitates easy paralleling. The device exhibits virtually no recovery tail and zero switching losses with temperature-invariant switching behavior. It operates at junction temperatures up to 175 °C and meets JESD 201 class 1A whisker test requirements.

Single Diodes Feature Summary

• Majority carrier diode using Schottky technology on SiC wide band gap material
• High CTI molding compound provides excellent electrical insulation at relevant working voltages
• MPS structure for high ruggedness to forward current surge events

Single Diodes Applications

• AC/DC PFC converters
• DC/DC ultra high frequency output rectification in FBPS converters
• LLC converters

Single Diodes Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure correct packaging orientation and environmental compliance. Confirm that the requested quantity aligns with the standard factory reel size of 800 units per 13-inch diameter reel. Cross-reference the document revision date to ensure access to the most current thermal and electrical specifications before finalizing procurement orders.

Single Diodes Selection Notes

Select this component for applications requiring hard switching and efficient operation over a wide temperature range. The positive VF temperature coefficient makes it suitable for parallel configurations without complex current balancing circuits. Ensure the design accommodates the maximum operating junction temperature of 175 °C and verify that the D2PAK 2L package thermal resistance meets the system's heat dissipation requirements.

Single Diodes Part Context

This part belongs to Vishay's Gen 3 Power SiC Merged PIN Schottky Diode family. It is designed as an optimum choice for high-speed hard switching and efficient operation over a wide temperature range. The device addresses limitations associated with Silicon ultrafast recovery behavior, offering improved performance in high-frequency power conversion topologies.

Single Diodes Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet or supporting documentation.

Single Diodes FAQ

What is the typical forward voltage drop at 25 °C?

The typical forward voltage drop is 1.35 V at an instantaneous forward current of 5 A and a junction temperature of 25 °C.

Does the device exhibit reverse recovery charge?

No, the device features virtually no recovery tail and no switching losses due to its majority carrier Schottky technology.