VS-HFA16TA60C-M3

Diode Arrays Overview

The VS-HFA16TA60C-M3 is a HEXFRED ultrafast soft recovery diode featuring a common cathode configuration in a TO-220AB 3L package. It provides dual legs with a maximum continuous forward current of 8 A per leg and a peak repetitive forward current of 24 A. The device supports a maximum DC reverse voltage of 600 V, with a typical forward voltage of 1.4 V at 8 A. Reverse recovery time is typically 18 ns under standard test conditions. Operating junction temperature ranges from -55 °C to +150 °C.

Diode Arrays Feature Summary

• Ultrafast and ultrasoft recovery characteristics designed to minimize switching noise
• Extremely low peak recovery current (IRRM) and reverse recovery charge (Qrr)
• No tendency to exhibit snap-off behavior during the tb portion of recovery
• Qualified according to JEDEC JESD 47 standards for stress testing

Diode Arrays Applications

• Companion diodes for IGBTs and MOSFETs
• Power supply and power conversion systems such as inverters
• Motor drives requiring high speed and high efficiency

Diode Arrays Procurement Notes

Verify component authenticity by checking the case marking against the official outline drawing. Confirm that the ordering suffix matches the required environmental compliance specifications. Ensure thermal interface materials are compatible with the specified mounting torque limits. Validate datasheet revision dates prior to final design integration.

Diode Arrays Selection Notes

Select this component when applications demand reduced snubbing requirements and lower electromagnetic interference. The common cathode topology simplifies circuit layout for center-tap configurations. Evaluate thermal resistance parameters to ensure adequate heatsinking for the intended duty cycle and ambient temperature conditions.

Diode Arrays Part Context

This part belongs to the HEXFRED family of ultrafast recovery diodes manufactured by Vishay Semiconductors. The product line utilizes advanced epitaxial construction techniques to achieve superior switching performance compared to standard rectifiers. The specific model integrates two independent diode elements within a single leaded package structure.

Diode Arrays Replacement Considerations

VS-HFA16TA60C-N3

Diode Arrays FAQ

Does the VS-HFA16TA60C-M3 exhibit snap-off behavior?

No, the HEXFRED technology ensures the device does not exhibit any tendency to snap-off during the tb portion of the recovery process.

What is the maximum repetitive forward current rating?

The maximum repetitive forward current (IFRM) is rated at 24 A.

How is the internal circuit configured?

The device features a common cathode configuration with two anodes and a shared base/cathode connection.