VT2060G-E3/4W

Diode Arrays Overview

The VT2060G-E3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier in a TO-220AB package. It features a common cathode configuration with two elements, rated for a maximum repetitive peak reverse voltage of 60 V and an average forward rectified current of 10 A per diode. The device exhibits an ultra-low forward voltage drop of 0.50 V at 5 A and 0.63 V at 10 A. It supports a peak forward surge current of 100 A and operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses.
• Provides high efficiency operation suitable for demanding power conversion environments.
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards.

Diode Arrays Applications

• High frequency inverters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and delivery mode. The /4W suffix indicates tube packaging for the TO-220AB case. Ensure compliance with RoHS directives and material categorization requirements by referencing the Vishay document number 89133 before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for 60 V applications. The TMBS technology offers superior performance compared to standard Schottky diodes. Verify thermal management capabilities based on the specified thermal resistance values. Confirm that the operating environment remains within the defined temperature limits for optimal reliability.

Diode Arrays Part Context

This part belongs to the VT2060G family of dual high voltage Trench MOS Barrier Schottky Rectifiers manufactured by Vishay General Semiconductor. The family includes variants such as VFT2060G, VBT2060G, and VIT2060G, which share identical electrical characteristics but differ in physical package configurations like ITO-220AB, D2PAK, and TO-262AA.

Diode Arrays Replacement Considerations

Direct substitutes include other Vishay dual Schottky rectifiers within the same 60 V, 10 A rating class. Verify pinout compatibility and thermal resistance parameters when considering alternative manufacturers or packages.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The device has a non-repetitive avalanche energy rating of 65 mJ per diode at TJ = 25 °C with L = 60 mH.

Does the E3 suffix indicate lead-free compliance?

Yes, the E3 suffix denotes that the product is RoHS-compliant and meets JESD 201 class 1A whisker test requirements.

What is the isolation voltage for the ITO-220AB variant?

The ITO-220AB variant provides an isolation voltage of 1500 VAC from terminal to heatsink for one minute.