VT3045C-M3/4W

Diode Arrays Overview

The VT3045C-M3/4W is a dual low-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with a maximum repetitive peak reverse voltage (VRRM) of 45 V and a total maximum average forward rectified current (IF(AV)) of 30 A, distributed as 15 A per diode. The device supports a peak forward surge current (IFSM) of 200 A per diode. Forward voltage drop (VF) is specified at 0.39 V typical and 0.48 V maximum when conducting 15 A at an ambient temperature of 25 °C. The component operates within a junction and storage temperature range of -40 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage and reduced power losses for high efficiency operation.
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards.
• Halogen-free and RoHS compliant construction with the M3 suffix meeting JESD 201 class 1A whisker test requirements.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific package variant required, as the base part number covers both TO-220AB (VT3045C) and TO-262AA (VIT3045C). Confirm the ordering suffix matches the desired delivery mode, such as /4W for tube packaging. Ensure compliance with halogen-free and RoHS standards if mandated by the design specifications. Validate thermal management capabilities against the junction-to-case thermal resistance values provided in the datasheet.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drop at high currents to minimize conduction losses. The 45 V rating suits low-voltage systems where standard silicon rectifiers may exhibit excessive voltage drops. Consider the TO-220AB or TO-262AA package based on available board space and mounting constraints. Verify that the operating environment stays within the specified -40 °C to +150 °C temperature range.

Diode Arrays Part Context

This device belongs to the VT3045C series of dual Schottky rectifiers from Vishay. It is designed using Trench MOS technology to offer superior performance compared to conventional barrier Schottky diodes. The product line includes variants for different packages, such as the through-hole TO-220AB and the surface-mount compatible TO-262AA, all sharing identical electrical characteristics.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers: VT3045CBP-M3/4W.