VX20170C-M3/P

Diode Arrays Overview

The Vishay VX20170C-M3/P is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier in a TO-220AB package. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 170 V and a total maximum average forward rectified current of 20 A (10 A per diode). The device exhibits ultra-low forward voltage, reaching 0.58 V at 5.0 A and 0.65 V at 10 A when the junction temperature is 125 °C. Peak forward surge current capability is 150 A, and the operating junction temperature range extends from -40 °C to +175 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Provides high efficiency operation suitable for demanding switching applications
• Features matte tin plated leads that are solderable per J-STD-002 standards

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm compliance requirements. The base part number without suffixes may differ in material categorization or qualification status compared to the M3 variant. Ensure the procurement request explicitly includes the required suffix to match the intended environmental and reliability specifications for the target application.

Diode Arrays Selection Notes

Select this component for designs requiring high-efficiency rectification at moderate voltages up to 170 V. The TO-220AB package provides robust thermal management capabilities with a typical junction-to-case thermal resistance of 1 °C/W. Consider the common cathode configuration for synchronous rectification or parallel diode arrangements where low forward voltage drop is critical for minimizing conduction losses.

Diode Arrays Part Context

This device belongs to Vishay's Dual High Voltage TMBS rectifier series, leveraging trench MOS barrier Schottky technology. The product line emphasizes low forward voltage characteristics to enhance overall system efficiency. The TO-220AB mechanical housing ensures compatibility with standard through-hole mounting techniques while providing adequate heat dissipation for high-current applications.

Diode Arrays Replacement Considerations

VX20170CHM3_A/P

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage rating?

The maximum repetitive peak reverse voltage (VRRM) is rated at 170 V.

How is the forward current distributed in the common cathode configuration?

The device supports a total maximum average forward rectified current of 20 A, which is distributed as 10 A per diode.

What is the typical junction capacitance value?

The typical junction capacitance is 650 pF, measured at 4.0 V reverse bias and 1 MHz frequency.