VX60202PGW-M3/P

Diode Arrays Overview

The Vishay VX60202PGW-M3/P is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier housed in a TO-247AD 3L package. It features a maximum repetitive peak reverse voltage of 200 V and a total maximum average forward rectified current of 60 A, split as 30 A per diode. The device supports a peak forward surge current of 300 A and operates within a junction temperature range of -40 °C to +175 °C. Electrical characteristics include an instantaneous forward voltage of 0.74 V at 30 A and 125 °C, with a typical thermal resistance of 0.6 °C/W.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Designed for high efficiency operation in demanding environments
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against the manufacturer's documentation to confirm compliance requirements. The base P/N-M3 indicates halogen-free and RoHS-compliant construction. Confirm whether the HM3 suffix is required for AEC-Q101 automotive qualification. Ensure the delivery mode matches the intended manufacturing process, such as tube packaging for through-hole mounting.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for high-voltage applications up to 200 V. The TO-247AD 3L package provides robust mechanical stability and efficient heat dissipation via the thermal pad. Consider the 0.6 °C/W junction-to-case thermal resistance for thermal management calculations in high-current scenarios exceeding standard rectifier capabilities.

Diode Arrays Part Context

This part belongs to the VX60202PGW series of dual TMBS rectifiers from Vishay General Semiconductor. It is engineered to replace traditional PN-junction rectifiers in high-frequency applications where switching losses and forward voltage drops are critical design constraints. The device integrates two independent diodes within a single encapsulated unit to save board space.

Diode Arrays Replacement Considerations

VX60202PGWHM3_A/P

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175 °C.

How is the forward current rated for this dual diode?

The total maximum average forward rectified current is 60 A, distributed as 30 A per diode.

Is this component qualified for automotive applications?

AEC-Q101 qualification is available specifically for the HM3 ordering code variant.