W9425G6EH-5

Memory IC Overview

The W9425G6EH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM) organized as 4,194,304 words x 4 banks x 16 bits. It delivers data bandwidth up to 500M words per second and supports clock frequencies up to 250 MHz. The device operates with a 2.5V ±0.2V power supply for DDR333/400 applications and utilizes an SSTL_2 interface. It is packaged in a TSOP II 66-pin configuration.

Memory IC Feature Summary

• Double Data Rate architecture enabling two data transfers per clock cycle
• Differential clock inputs (CLK and CLK) for signal synchronization
• Programmable Mode Register for burst length and latency configuration
• Supports Auto Refresh and Self Refresh modes for data retention

Memory IC Applications

• Main memory for high performance applications
• Personal computer industrial standard systems
• High-speed data buffering requiring low latency

Memory IC Procurement Notes

Verify the specific speed grade suffix (-4, -5, -6) required for your system timing constraints. Confirm RoHS compliance and lead-free material status during sourcing. Ensure the TSOP II 66-pin package dimensions match your PCB footprint design specifications before finalizing procurement.

Memory IC Selection Notes

Select this component when a 256 Mbit capacity with a 16-bit bus width is required. Choose based on the necessary CAS Latency and clock frequency support for your target DDR generation. Verify that the operating temperature range meets your environmental requirements.

Memory IC Part Context

This part belongs to the Winbond W9425G6 series of DDR SDRAMs. It shares architectural similarities with other variants in the family but differs in speed grades and packaging options. It serves as a core memory solution for legacy and embedded systems requiring reliable synchronous DRAM performance.

Memory IC Replacement Considerations

Compatible substitutes include W9425G6JH-5I and W9425G6KH-5I. Verify pin compatibility and electrical characteristics before substitution.