XP3R303GMT-L

Single FETs, MOSFETs Overview

The XP3R303GMT-L is a single N-channel enhancement mode MOSFET manufactured by YAGEO XSemi. It utilizes silicon technology and is housed in a PMPAK package for surface mount applications. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 31 A, with a pulsed current rating of 105 A. Its on-resistance is specified at 3.3 milliohms. The gate-source voltage limits are ±20 V, and the threshold voltage is typically 2.5 V. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 5 W.

Single FETs, MOSFETs Feature Summary

• High current handling capability with a continuous drain current of 31 A and a peak pulsed current of 105 A.
• Low on-resistance design achieving 3.3 milliohms to minimize conduction losses.
• Robust thermal performance supporting operation up to a maximum junction temperature of 150°C.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management modules
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets to confirm package dimensions and tape specifications. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure ESD protection protocols are followed during handling due to moisture sensitivity classification.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in low-voltage environments. The 3.3 milliohm resistance suits high-current loads where thermal management is critical. Evaluate the 30 V rating against system transients to ensure adequate safety margins.

Single FETs, MOSFETs Part Context

This part belongs to the XP series of power MOSFETs from YAGEO XSemi. The series focuses on silicon-based solutions optimized for modern power conversion needs. The PMPAK package provides a compact form factor suitable for dense PCB layouts while maintaining effective heat dissipation characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers or packages.