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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FCPF850N80Z $1.17 | Fairchild/ON Semiconductor | MOSFET N-CH 800V 6A TO220F | Tube | - | - | * | - |
![]() FCPF9N60NT $0.94 | onsemi | MOSFET N-CH 600V 9A TO220F | Tube,Tube | TO-220F-3 | Through Hole | SuperMOS™ | -55°C ~ 150°C (TJ) |
![]() FCPF9N60NT $1.11 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 9 | Bulk | TO-220F-3 | Through Hole | SuperMOS™ | -55°C ~ 150°C (TJ) |
![]() FCPF9N60NTYDTU $1.05 | onsemi | MOSFET N-CH 600V 9A TO220F-3 | Tube,Tube | TO-220F-3 (Y-Forming) | Through Hole | SupreMOS™ | -55°C ~ 150°C (TJ) |
| onsemi | MOSFET N-CH 800V 2.6A IPAK | Tube | IPAK | Through Hole | SuperFET® II | -55°C ~ 150°C (TJ) | |
![]() FCU2250N80Z $0.81 | Fairchild Semiconductor | MOSFET N-CH 800V 2.6A I-PAK | Bulk | IPAK | Through Hole | SuperFET® II | -55°C ~ 150°C (TJ) |
![]() FCU3400N80Z $0.63 | Fairchild Semiconductor | MOSFET N-CH 800V 2A I-PAK | Bulk | IPAK | Through Hole | SuperFET® II | -55°C ~ 150°C (TJ) |
![]() FCU3400N80Z $0.36 | onsemi | MOSFET N-CH 800V 2A IPAK | Tube,Tube | IPAK | Through Hole | SuperFET® II | -55°C ~ 150°C (TJ) |

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