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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT 600V 31A D2PAKTubeD2PAKSurface Mount--55°C ~ 150°C (TJ)
International RectifierIGBT NPT 600V 31A D2PAKBulkD2PAKSurface Mount--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBTBulk--*-
Infineon TechnologiesIGBT NPT 600V 78A D2PAKTubeD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 78A D2PAKTape & Reel (TR),Cut Tape (CT)D2PAKSurface Mount--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 12A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
International RectifierIGBT 600V 12A D2PAKBulkD2PAKSurface Mount--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 12A 77W D2PAKTape & Reel (TR)D2PAKSurface Mount--55°C ~ 175°C (TJ)
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