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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationIGBT TRENCH 600V 85A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 85A TO-247ATubeTO-247AThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 90A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 90A TO-247ATubeTO-247AThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 90A TO-247ATubeTO-247AThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 16A LDPAKTape & Reel (TR),Cut Tape (CT)LDPAKSurface Mount-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 16A TO-220FLTubeTO-220FLThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 25A 4-LDPAKBulk4-LDPAKSurface Mount-150°C (TJ)
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