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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationIGBT 650VTube----
Renesas Electronics CorporationIGBT TRENCH 650V 100A TO-247ATubeTO-247AThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 60A TO-3PFPTubeTO-3PFPThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 60A TO-3PFPTubeTO-3PFPThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 100A TO-247ATubeTO-247AThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 80A TO-247ATubeTO-247AThrough Hole-175°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 650V 90A TO-247ATubeTO-247AThrough Hole-175°C (TJ)
Renesas Electronics CorporationHIGH SPEED IGBT, 270V, 50ABulk--*-
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