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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Renesas Electronics Corporation | IGBT TRENCH 600V 25A LDPAK | Tape & Reel (TR),Cut Tape (CT) | LDPAK | Surface Mount | - | 150°C (TJ) | |
 RJH60D2DPP-E0#T2 $2.24 | Renesas Electronics Corporation | RJH60D2DPP - IGBT 600V 25A | Bulk | - | - | * | - |
| Renesas Electronics Corporation | IGBT TRENCH 600V 25A TO-220FL | Tube | TO-220FL | Through Hole | - | 150°C (TJ) | |
 RJH60D3DPE-00#J3 $2.55 | Renesas Electronics Corporation | IGBT TRENCH 600V 35A LDPAK | Tape & Reel (TR),Cut Tape (CT) | LDPAK | Surface Mount | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 600V 35A TO-220FL | Tube | TO-220FL | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT TRENCH 600V 75A TO-247 | Tube | TO-247 | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT TRENCH 600V 75A TO-3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT TRENCH 600V 80A TO-3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) |
