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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationIGBT 1200V 30A TO-247BulkTO-247Through Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 1200V 50A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 1200V 60A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 1200V 70A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 1200V 70A TO-247BulkTO-247Through Hole-150°C (TJ)
RenesasIGBT 1350V 60A TO-247BulkTO-247Through Hole-150°C (TJ)
Renesas Electronics CorporationIGBTBulk--*-
Renesas Electronics CorporationIGBTBulk--*-
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