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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Rohm SemiconductorIGBT TRENCH FS 650V 104A TO-247GTubeTO-247GThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 104A TO-247GTubeTO-247GThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 132A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 132A TO247GEBulkTO-247GEThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 132A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 132A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 132A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 132A TO247GETubeTO-247GEThrough Hole--40°C ~ 175°C (TJ)
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