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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 RGWX5TS65HRC11 $4.14 | Rohm Semiconductor | IGBT TRENCH FS 650V 132A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
 RJH1BF6RDPQ-80#T2 $7.07 | Renesas Electronics Corporation | IGBT 1100V 55A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) |
RJH1BF7DPQ-E0#T2 $6.55 | Renesas | RJH1BF7 - INSULATED GATE BIPOLAR | Bulk | - | - | - | - |
RJH1BF7RDPQ-80#T2 $5.30 | Renesas | IGBT 1100V 60A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT 1200V 40A TO-247 | Tube | TO-247 | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT 1200V 50A TO-247 | Tube | TO-247 | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT 1200V 55A TO-247 | Bulk | TO-247 | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT 1200V 60A TO-247 | Tube | TO-247 | Through Hole | - | 150°C (TJ) |
