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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() RJH60A83RDPN-E0#T2 $2.13 | Renesas Electronics Corporation | IGBT 600V 20A TO-220AB | Tube | TO-220AB | Through Hole | - | - |
| Renesas Electronics Corporation | IGBT TRENCH 600V 30A LDPAK | Tape & Reel (TR) | LDPAK | Surface Mount | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT TRENCH 600V 45A TO-3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | IGBT TRENCH 600V 45A TO-3PFM | Tube | TO-3PFM | Through Hole | - | 150°C (TJ) | |
![]() RJH60D1DPE-00#J3 $2.70 | Renesas Electronics Corporation | IGBT TRENCH 600V 20A LDPAK | Tape & Reel (TR),Cut Tape (CT) | LDPAK | Surface Mount | - | 150°C (TJ) |
![]() RJH60D1DPP-A0#T2 $1.22 | Renesas Electronics Corporation | POWER TRANSISTOR IGBT 600V 10A | Tray | TO-220FPA | Through Hole | - | 150°C (TJ) |
![]() RJH60D1DPP-E0#T2 $1.29 | Renesas | IGBT TRENCH 600V 20A TO-220FP | Bulk | TO-220FP | Through Hole | - | 150°C (TJ) |
| Renesas Electronics Corporation | IGBT TRENCH 600V 20A TO-220FL | Tube | TO-220FL | Through Hole | - | 150°C (TJ) |