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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationIGBT 600V 20A TO-220ABTubeTO-220ABThrough Hole--
Renesas Electronics CorporationIGBT TRENCH 600V 30A LDPAKTape & Reel (TR)LDPAKSurface Mount-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 45A TO-3PTubeTO-3PThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 45A TO-3PFMTubeTO-3PFMThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 20A LDPAKTape & Reel (TR),Cut Tape (CT)LDPAKSurface Mount-150°C (TJ)
Renesas Electronics CorporationPOWER TRANSISTOR IGBT 600V 10ATrayTO-220FPAThrough Hole-150°C (TJ)
RenesasIGBT TRENCH 600V 20A TO-220FPBulkTO-220FPThrough Hole-150°C (TJ)
Renesas Electronics CorporationIGBT TRENCH 600V 20A TO-220FLTubeTO-220FLThrough Hole-150°C (TJ)
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