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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() RGW80TK65EGVC11 $7.12 | Rohm Semiconductor | IGBT TRENCH FS 650V 39A TO-3PFM | Tube | TO-3PFM | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGW80TK65GVC11 $3.09 | Rohm Semiconductor | IGBT TRENCH FS 650V 39A TO-3PFM | Tube | TO-3PFM | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGW80TS65CHRC11 $12.32 | Rohm Semiconductor | IGBT 650V 81A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGW80TS65DGC11 $6.01 | Rohm Semiconductor | IGBT TRENCH FS 650V 78A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGW80TS65DGC13 $5.62 | Rohm Semiconductor | IGBT TRENCH FS 650V 78A TO-247GE | Tube | TO-247GE | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGW80TS65DHRC11 $7.11 | Rohm Semiconductor | IGBT TRENCH FS 650V 80A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGW80TS65EHRC11 $7.61 | Rohm Semiconductor | IGBT TRENCH FS 650V 80A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() RGW80TS65GC11 $5.24 | Rohm Semiconductor | IGBT TRENCH FS 650V 78A TO-247N | Tube | TO-247N | Through Hole | - | -40°C ~ 175°C (TJ) |

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