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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Rohm SemiconductorIGBT TRENCH FS 650V 64A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 64A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 60A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 60A TO-247GETubeTO-247GEThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 64A TO-247NTubeTO-247NThrough Hole--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 83A TO-263LTape & Reel (TR),Cut Tape (CT)TO-263LSurface Mount--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 83A TO-263LTape & Reel (TR),Cut Tape (CT)TO-263LSurface Mount--40°C ~ 175°C (TJ)
Rohm SemiconductorIGBT TRENCH FS 650V 39A TO-3PFMTubeTO-3PFMThrough Hole--40°C ~ 175°C (TJ)
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