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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Renesas Electronics CorporationIGBT 400V 8VSONTape & Reel (TR)8-VSON (3x4.4)Surface Mount--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBT 400VTube8-VSON (3x4.4)Surface Mount--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBTS, 400V, 150A, N-CHANNELBulk--*-
Renesas Electronics CorporationIGBT 400V 8TSOJTape & Reel (TR)8-TSOJSurface Mount--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBT 430V TO220FLTubeTO-220FLThrough Hole--40°C ~ 150°C (TJ)
Renesas Electronics CorporationIGBT 430V, 40A FOR PLASMA TVBulk--*-
Renesas Electronics CorporationIGBT 430V, 40A FOR PLASMA TVBulk--*-
Renesas Electronics CorporationIGBT 500V TO220FLTubeTO-220FLThrough Hole--40°C ~ 150°C (TJ)
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