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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APTML102UM09R004T3AG $48.02 | Microsemi Corporation | MOSFET 2N-CH 100V 154A SP3 | Bulk | SP3 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTML202UM18R010T3AG $47.74 | Microsemi Corporation | MOSFET 2N-CH 200V 109A SP3 | Bulk | SP3 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Microsemi Corporation | MOSFET 2N-CH 1200V 370A SP6 | Bulk | SP6 | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET 2N-CH 50V 3A 8SO | Tube | 8-SO | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRF7103QTR $0.65 | Infineon Technologies | MOSFET 2N-CH 50V 3A 8SOIC | Tape & Reel (TR),Cut Tape (CT),Bulk | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET 2N-CH 30V 5.3A 8SOIC | Tube | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET 2N-CH 30V 5.3A 8SOIC | Tape & Reel (TR) | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET 2P-CH 20V 4.3A 8SOIC | Tube | 8-SOIC | Surface Mount | HEXFET® | -55°C ~ 150°C (TJ) |