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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FZ800R45KL3B5NOSA2 $1,375.59 | Infineon Technologies | IGBT MOD 4500V 1600A 9000W | Bulk,Tray | Module | Chassis Mount | - | -50°C ~ 125°C |
![]() FZ825R33HE4DBPSA1 $959.31 | Infineon Technologies | HV B SINGLE SWITCH POWER MODULES | Tray | AG-IHVB130-3 | Chassis Mount | IHM-B | -40°C ~ 150°C (TJ) |
![]() FZ900R12KE4HOSA1 $132.37 | Infineon Technologies | IGBT MOD 1200V 900A 4300W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MODULE 1200V AIHM130-2 | Tray | - | - | - | - | |
![]() FZ900R12KP4HOSA1 $116.84 | Infineon Technologies | IGBT MODULE 1200V 900A | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() GA200SA60S $20.36 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 200A 630W SOT227B | - | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() GA200SA60U $23.07 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 200A 500W SOT227B | - | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) |
![]() GA400TD25S $125.65 | Vishay General Semiconductor - Diodes Division | IGBT MOD 250V 400A INT-A-PAK | Tube | Dual INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) |