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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 7.2A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 3PHASE IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 11A 36W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 27A 63W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 24A 63W IMS-2 | Bulk | IMS-2 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 20A 63W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 88A 338W EMIPAK2 | Bulk | EMIPAK2 | Chassis Mount | - | 150°C (TJ) | |
![]() VS-ENK025C65S $53.18 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |