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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() VS-ETF075Y60U $71.77 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 109A EMIPAK-2B | Bulk | EMIPAK-2B | Chassis Mount | - | 175°C (TJ) |
![]() VS-ETF150Y65N $54.09 | Vishay General Semiconductor - Diodes Division | IGBT MOD 650V 201A 600W | Box | Module | - | FRED Pt® | 175°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 650V 142A EMIPAK-2B | Tray | EMIPAK-2B | Chassis Mount | - | 175°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 22A 89W EMIPAK-2B | Bulk | EMIPAK-2B | Chassis Mount | - | 150°C (TJ) | |
![]() VS-ETY020P120F $115.81 | Vishay General Semiconductor - Diodes Division | IGBT MOD OUTPUT & SW EMIPAK 2B | Tray | - | - | - | - |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 100A 250W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 182A INT-A-PAK | Bulk | INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 220A INT-A-PAK | Bulk | INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) |