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IGBT Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 80A 463W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
 VS-50MT060PHTAPBF $46.16 | Vishay General Semiconductor - Diodes Division | MODULES IGBT - MTP SWITCH | Bulk | 12-MTP | Through Hole | HEXFRED® | -40°C ~ 150°C (TJ) |
VS-50MT060TFT $38.25 | Vishay General Semiconductor - Diodes Division | MODULES IGBT - MTP SWITCH | Bulk | 20-MTP | Chassis Mount | FRED Pt® | -40°C ~ 175°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 114A 658W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 100A 347W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 96A 378W MTP | Tray | MTP | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 8.8A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 3PHASE IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) |
